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Stražar Vedenje Razočaranje gan see radiation test Kača Rudar Zahteve

a) Image of radiation test chamber with a Cs-137 source and (b) image... |  Download Scientific Diagram
a) Image of radiation test chamber with a Cs-137 source and (b) image... | Download Scientific Diagram

Photonics | Free Full-Text | Study of Single Event Burnout Mechanism in GaN  Power Devices Using Femtosecond Pulsed Laser
Photonics | Free Full-Text | Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser

Photonics | Free Full-Text | Study of Single Event Burnout Mechanism in GaN  Power Devices Using Femtosecond Pulsed Laser
Photonics | Free Full-Text | Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser

Workstation for Laser Testing of Single Events Effects
Workstation for Laser Testing of Single Events Effects

Meng Gan - Radiation Oncologist - MercyOne | LinkedIn
Meng Gan - Radiation Oncologist - MercyOne | LinkedIn

Unravelling the secrets of the resistance of GaN to strongly ionising  radiation | Communications Physics
Unravelling the secrets of the resistance of GaN to strongly ionising radiation | Communications Physics

New family of rad-hard enhancement-mode GaN transistors for space  applications | Electronics360
New family of rad-hard enhancement-mode GaN transistors for space applications | Electronics360

Workstation for Laser Testing of Single Events Effects
Workstation for Laser Testing of Single Events Effects

GaN in orbit and beyond - Power Electronic Tips
GaN in orbit and beyond - Power Electronic Tips

ESA - Going GaN: novel chips powering space missions
ESA - Going GaN: novel chips powering space missions

Wide Bandgap Power – SiC, GaN – Radiation Reliability
Wide Bandgap Power – SiC, GaN – Radiation Reliability

k-space imaging of anisotropic 2D electron gas in GaN/GaAlN  high-electron-mobility transistor heterostructures | Nature Communications
k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures | Nature Communications

Radiation Performance of Enhancement-Mode GaN Power Devices - Technical  Articles
Radiation Performance of Enhancement-Mode GaN Power Devices - Technical Articles

Ionizing radiation hardness tests of GaN HEMTs for harsh environments -  ScienceDirect
Ionizing radiation hardness tests of GaN HEMTs for harsh environments - ScienceDirect

Radiation Performance of Enhancement-Mode GaN Power Devices - Technical  Articles
Radiation Performance of Enhancement-Mode GaN Power Devices - Technical Articles

Workstation for Laser Testing of Single Events Effects
Workstation for Laser Testing of Single Events Effects

Are GaN RF devices reliable enough for space missions? - News
Are GaN RF devices reliable enough for space missions? - News

Unravelling the secrets of the resistance of GaN to strongly ionising  radiation | Communications Physics
Unravelling the secrets of the resistance of GaN to strongly ionising radiation | Communications Physics

Ionizing radiation hardness tests of GaN HEMTs for harsh environments -  ScienceDirect
Ionizing radiation hardness tests of GaN HEMTs for harsh environments - ScienceDirect

PDF) Testing and Calibration of an Ultraviolet-A Radiation Sensor Based on  GaN Photodiode
PDF) Testing and Calibration of an Ultraviolet-A Radiation Sensor Based on GaN Photodiode

Ionizing radiation hardness tests of GaN HEMTs for harsh environments -  ScienceDirect
Ionizing radiation hardness tests of GaN HEMTs for harsh environments - ScienceDirect

Photonics | Free Full-Text | Study of Single Event Burnout Mechanism in GaN  Power Devices Using Femtosecond Pulsed Laser
Photonics | Free Full-Text | Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser

Driving motors in space - News
Driving motors in space - News

GaN in orbit and beyond - Power Electronic Tips
GaN in orbit and beyond - Power Electronic Tips

Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and  GaN Power Electronics
Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics